Method for manufacturing a vibrating beam accelerometer

ABSTRACT

The method of the present invention includes forming a frame and a proof mass suspended from the frame by one or more flexures, and including within a thin active layer one or more vibratory force transducers suitably coupled to the proof mass for detecting a force applied to the proof mass. According to the present invention, an insulating layer, such as silicon oxide, is formed between the substrate and the active layer to insulate the active layer from the substrate. Providing a separate insulating layer between the substrate and active layer improves the electrical insulation between the proof mass and the transducers, which allows for effective operation over a wide range of temperatures.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present invention is a divisional of application Ser. No.08/735,299, filed Oct. 22, 1996 now U.S. Pat. No. 5,948,981 which is acontinuation-in-part of application Ser. No. 08/651,927, filed May 21,1996.

BACKGROUND OF THE INVENTION

The present invention relates generally to the detection and measurementof forces and more particularly to an improved accelerometerincorporating one or more vibrating force transducers for measuring theforce applied to a proof mass. The present invention also relates to amethod for manufacturing the accelerometer.

A widely used technique for force detection and measurement employs amechanical resonator having a frequency of vibration proportional to theforce applied. In one such mechanical resonator, one or more elongatebeams are coupled between an instrument frame and a proof mass suspendedby a flexure. An electrostatic, electromagnetic or piezoelectric forceis applied to the beams to cause them to vibrate transversely at aresonant frequency. The mechanical resonator is designed so that forceapplied to the proof mass along a fixed axis will cause tension orcompression of the beams, which varies the frequency of the vibratingbeams. The force applied to the proof mass is quantified by measuringthe change in vibration frequency of the beams.

Recently, vibratory force transducers have been fabricated from a bodyof semiconductor material, such as silicon, by micromachiningtechniques. For example, one micromachining technique involves masking abody of silicon in a desired pattern, and then deep etching the siliconto remove portions thereof. The resulting three-dimensional siliconstructure functions as a miniature mechanical resonator device, such asan accelerometer that includes a proof mass suspended by a flexure.Existing techniques for manufacturing these miniature devices aredescribed in U.S. Pat. Nos. 5,006,487, "Method of Making anElectrostatic Silicon Accelerometer" and 4,945,765 "SiliconMicromachined Accelerometer", the complete disclosures of which areincorporated herein by reference.

The present invention is particularly concerned with accelerometershaving vibrating beams driven by electrostatic forces. In one method offabricating such miniature accelerometers, a thin layer of silicon, onthe order of about 20 micrometers thick, is epitaxially grown on aplanar surface of a silicon substrate. The epitaxial layer is etched,preferably by reactive ion etching in a suitable plasma, to form thevibrating components of one or more vibratory force transducers (i.e.,vibrating beams and electrodes). The opposite surface of the substrateis etched to form a proof mass suspended from a stationary frame by oneor more flexure hinge(s). While the opposite surface of the substrate isbeing etched, the epitaxial layer is typically held at an electricpotential to prevent undesirable etching of the epitaxial layer. Duringoperation of the transducer, the beams and the electrodes areelectrically isolated from the substrate by back biasing a diodejunction between the epitaxial layer and the substrate. The transducermay then be coupled to a suitable electrical circuit to provide theelectrical signals required for operation. In silicon vibrating beamaccelerometers, for example, the beams are capacitively coupled to theelectrodes, and then both the beams and electrodes are connected to anoscillator circuit.

The above described method of manufacturing force detection devicessuffers from a number of drawbacks. One such drawback is that the beamsand electrodes of the vibratory force transducer(s) are often notsufficiently electrically isolated from the underlying substrate. Athigh operating temperatures, for example, electric charge or current mayleak across the diode junction between the substrate and the epitaxiallayer, thereby degrading the performance of the transducer(s). Anotherdrawback with this method is that it is difficult to etch the substratewithout etching the epitaxial layer (even when the epitaxial layer isheld at an electric potential). This undesirable etching of theepitaxial layer may reduce the accuracy of the transducer.

Another drawback with many existing force detection devices, such asaccelerometers, is that they often have an asymmetrical design, whichmay make it more difficult to incorporate the accelerometer into asystem, particularly in high performance applications. For example, theproof mass flexure hinge is typically etched on the opposite surface ofthe substrate as the transducers. This produces an asymmetrical devicein which the input axis of the accelerometer is skewed relative to adirection normal to the surface of the silicon wafer.

SUMMARY OF THE INVENTION

The present invention provides methods for detecting and measuringforces with mechanical resonators and improved methods of manufacturingthese force detecting apparatus. These methods and apparatus are usefulin a variety of applications, and they are particularly useful formeasuring acceleration.

The present invention includes a substrate coupled to a thin activelayer each comprising a semiconducting material. The substrate has aframe and a proof mass suspended from the frame by one or more flexures.The active layer includes one or more vibratory force transducerssuitably coupled to the proof mass for detecting a force applied to theproof mass. According to the present invention, an insulating layer isformed between the substrate and the active layer to insulate the activelayer from the substrate. Providing a separate insulating layer betweenthe substrate and active layer improves the electrical insulationbetween the proof mass and the transducers, which allows for effectivetransducer operation over a wide range of temperatures.

In a specific configuration, the substrate and active layer are madefrom a silicon material, and the insulating layer comprises a thin layer(e.g., about 0.1 to 10.0 micrometers) of oxide, such as silicon oxide.The silicon oxide layer retains its insulating properties over a widetemperature range to ensure effective transducer performance at, forexample, high operating temperatures on the order of above about 70° C.to 100C. In addition, the insulating layer inhibits undesirable etchingof the active layer while the substrate is being etched, which improvesthe accuracy of the apparatus.

In a preferred configuration, the flexure hinge of the proof mass ispreferably etched near or at the center of the silicon substrate thatcomprises the proof mass (i.e., substantially centered between the firstand second surfaces of the substrate). This arrangement provides aninput axis that is substantially normal to the surface of the substrate,thereby improving the alignment.

In an exemplary embodiment, the force detection apparatus comprises anaccelerometer for measuring the acceleration of the stationary framerelative to the proof mass. In this embodiment, the active layerincludes a pair of vibratory force transducers on either side of theproof mass. The vibratory force transducers each preferably includefirst and second parallel beams each having a first end portion fixed tothe proof mass, a second end portion fixed to the instrument frame and aresonating portion therebetween. The transducers each further includefirst and second electrodes positioned adjacent to and laterally spacedfrom the first and second beams. An oscillating circuit is capacitivelycoupled to the electrodes for electrostatically vibrating the beams andfor determining a magnitude of a force applied to the proof mass basedon the vibration frequency of the beams.

The accelerometer of the present invention is manufactured by applyingan insulating layer of silicon oxide between the silicon substrate andthe active layer. Preferably, the silicon oxide layer is first depositedor grown onto substantially planar surfaces of the substrate and theactive layer, and then the substrate and active layer are bondedtogether, e.g., with high temperatures, so that the silicon oxide layersinsulate the substrate from the active layer. In a preferredconfiguration, portions of the silicon wafers will be removed after theyhave been bonded together to provide a substrate of about 300 to 700micrometers and a relatively thin active layer of about 5 to 40micrometers bonded thereto. The proof mass and instrument frame are thenetched into the substrate and the transducers are etched, preferablywith reactive ion etching, into the active layer. The insulating layerinhibits undesirable etching of the active layer while the substrate isbeing etched and vice versa. Forming the accelerometer components fromthe silicon wafers results in the transducer beams being mechanicallycoupled to the proof mass and the frame. Both the beams and theelectrodes are then coupled to a suitable external oscillator circuit.

Other features and advantages of the invention will appear from thefollowing description in which the preferred embodiment has been setforth in detail in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic top view of a micro silicon accelerometermanufactured according to the principles of the present invention;

FIG. 2 is an exploded view of the accelerometer of FIG. 1;

FIG. 3 is an enlarged view of a portion of the accelerometer of FIG. 1,illustrating an exemplary vibratory force transducer;

FIG. 4 is an enlarged view of the vibratory force transducer of FIG. 3;

FIG. 5 is a further enlarged view of the vibratory force transducer,illustrating the intermeshed projecting fingers of the presentinvention;

FIG. 6 is a block diagram of an electrical circuit for driving thetransducer of FIG. 3; and

FIGS. 7A-7C are schematic views illustrating a method for manufacturingan accelerometer according to the present invention.

DESCRIPTION OF THE SPECIFIC EMBODIMENTS

Referring to the figures, wherein like numerals indicate like elements,a representative force detecting system or accelerometer 2 isillustrated according to the present invention. Accelerometer 2 is aminiature structure fabricated from a body of semiconductor material bymicro-machining techniques. As shown in FIG. 1, accelerometer 2 ispreferably formed from a monocrystalline silicon body 4 that includes apair of inner flexures 14, 16 supporting a proof mass 18 for movement ofthe proof mass 18 about a hinge axis 20 parallel to the plane of body 4.Proof mass 18 will move about hinge axis 20 in response to an appliedforce, such as the acceleration of the vehicle, aircraft or the likethat houses accelerometer 2. Accelerometer 2 includes a pair ofvibratory force transducers 22, 24 coupled to proof mass 18 and to body4 for measuring forces applied to proof mass 18 (discussed in detailbelow). An oscillator circuit 30 (FIG. 6) electrostatically drivestransducers 22, 24 at their resonance frequency. When a force is appliedto proof mass 18, mass 18 will rotate about hinge axis 20, causing axialforces (compressive or tensile) to be applied to transducers 22, 24. Theaxial forces change the frequency of vibration of transducers 22, 24 andthe magnitude of this change serves as a measure of the applied force.

FIG. 2 schematically illustrates silicon body 4 comprising an uppersilicon or active layer 31 electrically isolated from an underlyingsubstrate 32 by an insulating layer 34 applied to substrate 32 (notethat an insulating layer may also be applied to active layer 31, asshown in FIGS. 7A-7C). Insulating layer 34 preferably comprises a thinlayer (e.g., about 0.1 to 10.0 micrometers) of oxide, such as siliconoxide. The silicon body 4 is usually formed by oxidizing active layer 31and substrate 32, and then adhering the two layers together. A portionof active layer 31 will be removed to bring layer 31 to the desiredthickness The silicon oxide layer 34 retains its insulating propertiesover a wide temperature range to ensure effective transducer performanceat, for example, high operating temperatures on the order of above about70° C. to 100C. In addition, the insulating layer 34 inhibitsundesirable etching of the active layer while the substrate is beingetched (as discussed in detail below).

As shown in FIG. 2, proof mass 18 is formed from substrate 32 by etchinga slot 42 through substrate and suitably etching around inner flexures14, 16. Transducer 22 and the appropriate electrical bonds 59, 72(discussed below) for coupling transducer 22 to oscillator circuit 30are formed on active layer 31 by suitable etching techniques, such asreactive ion etching, anisotropic etching or the like. Preferably,electrical bonds 59, 72 are directly coupled to oscillator circuit 30.If desired, the remaining portions (not shown) of active layer 31 maythen be removed to minimize disturbances to the active components.

As shown in FIG. 2, inner flexures 14, 16 are preferably etched near orat the center of the silicon substrate 32 (i.e., substantially centeredbetween upper and lower surfaces 33, 35). Preferably, flexures 14, 16are formed by anistropically etching the flexures in a suitable etchant,such as potassium hydroxide. This arrangement provides an input axis 20(the axis about which proof mass 18 rotates in response to an appliedforce) that is substantially normal to the plane of substrate 32, whichreduces the skew of the input axis 20 relative to the mass of the proofmass 18. Flexures 14, 16 are preferably spaced from each other anddefine an effective hinge point 37 centered therebetween. Alternatively,a single flexure (not shown) may be formed at hinge point 37.Preferably, flexures 14, 16 are designed to limit S-bending. To thisend, flexures 14, 16 will preferably have a relatively short length.

Referring again to FIG. 1, outer and inner frames 6, 8 are formed onsubstrate 32 by etching slots 36, 38 through substrate 32. Slots 36, 38overlap each other to form flexures 10, 12 so that inner and outerframes 6, 8 are movable relative to each other. Outer frame 6 is usuallycoupled to a silicon cover plate (not shown), which, in turn, istypically connected to a ceramic or metal mounting plate (not shown).Since the mounting and cover plates are fabricated from differentmaterials, they will usually have substantially different coefficientsof thermal expansion when heated. This thermal mismatching may causeundesirable stresses and strains at the interface of the inner and coverplates, causing a slight distortion of outer frame 6. Flexures 10, 12allow inner frame 8 to move relative to outer frame 6 to minimize thedistortion of inner frame 8 and thereby decrease the effects of thermalmismatching on transducers 22, 24.

Referring to FIGS. 3-5, one of the vibratory transducers 22 will now bedescribed in detail. Vibratory transducer 22 comprises a pair ofgenerally parallel beams 50, 52 coupled together at enlarged or widenedend portions 54, 56 and separated from each other by a slot 58 to form adouble ended tuning fork. Beams 50, 52 are formed from active siliconlayer 31 and separated from substrate 32 so that the beams may bevibrated laterally relative to fixed end portions 54, 56 (discussedbelow). End portions 54, 56 are suitably bonded to proof mass 18 andbody 4, respectively, by mounting pads 55, 57. Widened end portions 54,56 are provided to mechanically couple the vibrating beams 50, 52 toeach other. Slot 58 will usually have a width of about 10 to 30 micronsand a length of about 1000 to 2000 microns. However, it will beunderstood that these dimensions may vary depending on the design.

Of course, it should be recognized that the present invention is notlimited to the double ended tuning fork described above and shown inFIGS. 3-5. For example, accelerometer 2 may incorporate a single beam ora variety of other mechanical resonator arrangements. However, a doubleended tuning fork arrangement is generally preferred because beams 50,52 can be driven laterally in opposite directions relative to eachother. Driving beams 50, 52 in opposite directions minimizes thetransfer of energy from the moving beams to the rest of the componentsin accelerometer 2, which increases the effectiveness of the transducer.

Transducers 22, 24 each further include an electrostatic drive forlaterally vibrating beams 50, 52 at the resonance frequency. Theelectrostatic drive includes a pair of elongate electrodes 62, 64located on either side of beams 50, 52, respectively. Electrodes 62, 64are generally parallel to and laterally spaced from beams 50, 52 by agap 66 (see FIG. 5). Electrodes 62, 64 are etched from active layer 31and doped with a suitable conductive material to create the necessarycharge carriers and to facilitate completion of the electrical circuit.Alternatively, electrodes 62, 64 may be formed from an electricallyconductive material, such as gold, that is bonded to active layer 31.

As shown in FIGS. 1 and 3, each electrode 62, 64 is supported by a pairof support arms 68, 70 extending laterally away from beams. One of thesupport arms 68 on each electrode 62, 64 is coupled to a bonding pad 72for electrically coupling electrodes 62, 64 to oscillation circuit 30(see FIG. 5). Mounting pad 57 is coupled to an arm 53 that electricallycouples beams 50, 52 to a bonding pad 59. Bonding pad 59 is suitablycoupled to oscillation circuit 30 to complete the electrical circuitwith electrodes 60, 62 and beams 50, 52. As shown in FIG. 2, substrate32 may also include a bonding pad 61 for electrically connectingsubstrate 32 to ground. Bonding pads 59, 61 and 72 are formed from asuitable conductive material, such as gold.

FIGS. 4 and 5 illustrate a preferred embodiment of the presentinvention, in which beams 50, 52 each include a plurality of fingers 80projecting outward from a lateral surface 81 of each beam 50, 52 towardthe corresponding electrode 62, 64. Likewise, electrodes 62, 64 eachinclude a plurality of fingers 82 projecting laterally inward so thatbeam fingers 80 and electrode fingers 82 are intermeshed with eachother. Fingers 80, 82 are each sized so that their ends 84 will notcontact beams 50, 52 or electrodes 62, 64 when beams 50, 52 arelaterally vibrated relative to electrodes 62, 64. Usually, fingers 80,82 will have a length of about 20 to 60 microns and preferably about 35to 45 microns so that fingers 80, 82 overlap each other in the lateraldirection by about 2-10 microns. Electrode fingers 82 and beam fingers80 are axially spaced from each other by a suitable distance to provideelectric capacitance therebetween. Usually, electrode and beam fingers82, 80 will be spaced by about 2 to 10 microns from each other andpreferably about 4 to 8 microns. Since beam fingers 80 are axiallyspaced from electrode fingers 82, the distance between these fingerswill generally remain constant as beams 50, 52 vibrate in the lateraldirection.

Electrostatic force is generally proportional to the square of thecharge, which is proportional to the voltage and to the capacitancebetween the beam and the electrode. The capacitance is inverselyproportional to the distance between the beam and the electrode.Accordingly, the electrostatic force is proportional to the square ofthe voltage and inversely proportional to the square of the distancebetween the beam and the electrode. Thus, changes in the distancebetween the beam and the electrode will typically change theelectrostatic force. In fact, this change in the electrostatic forceoften acts as an electrical spring that works opposite to the elasticforce or mechanical spring of the beams to lower the resonancefrequency. For example, as the beam moves from its rest position closerto the electrode, the electrostatic force increases, the change in forceworking opposite to the elastic force of the beam. When the beam movesfrom its rest position away from the electrode, the electrostatic forcedecreases, so that the change in electrostatic force again works againstthe elastic restoring force of the beam. This lowers the resonancefrequency of the beam by a factor related to the magnitude of the biasvoltage. Accordingly, the resonant frequency of the beams is generallysensitive to changes in the bias voltage.

In the present invention, the distance between intermeshed beam andelectrode fingers 80, 82 remains substantially constant as the beams 50,52 vibrate relative to the stationary electrodes 62, 64. Theelectrostatic force between the beams and the electrodes is generallyproportional to the change in capacitance with distance. Since thecapacitance between the intermeshed electrode and beam fingers changeslinearly with the motion of the beams, the electrostatic force willremain substantially constant as the beams move toward and away from theelectrodes. Accordingly, the electrostatic force will remainsubstantially constant during vibration of beams 50, 52 and, therefore,will not work against the mechanical spring of the beams 50, 52 to lowerthe resonance frequency. Thus, the sensitivity to changes in biasvoltage is decreased with the present invention. Applicant has foundthat this sensitivity is reduced by 5 to 10 times compared to a similarresonator that does not incorporate intermeshed fingers. Reducing thesensitivity of the resonance frequency to changes in bias voltageincreases the accuracy of the vibratory force transducer. In addition,this allows the transducer to effectively operate with higher biasvoltage levels, which results in a larger signal-to-noise ratio andrequires less amplifier gain in the oscillator circuit. Usually, a biasvoltage of about 5 to 100 Volts will be applied to electrodes 62, 64 andbeams 50, 52 and preferably at least 50 Volts will be applied to theelectrodes and beams.

FIG. 6 illustrates a representative oscillation circuit 30 in whichvibrating beams 50, 52 of transducers 22, 24 function as a resonator. Atransimpedance amplifier 104 converts a sense current received fromvibrating beams 50, 52 to a voltage. This voltage is filtered by abandpass filter 106, which reduces noise, and its amplitude iscontrolled by an amplitude limiter 108. The resulting signal is combinedwith the output or DC bias voltage from a DC source 102 in a summingjunction 100. The DC bias voltage generates a force between electrodes62, 64 and beam 50, 52. The signal from amplitude limiter 108 modulatesthis force causing beams 50, 52 to vibrate laterally at their resonantfrequency. This lateral beam motion, in turn, generates the sensecurrent. An output buffer 110 isolates the oscillator from externalcircuitry connected to an output 112 of oscillation circuit 30. The gainin oscillation circuit 30 sustains oscillation of beams 50, 52.

As shown in FIG. 1, forces applied to proof mass 18 will cause proofmass 18 to rotate about hinge axis 20. This rotation generates an axialforce against transducers 22, 24. The axial force applied to transducers22, 24 proportionally changes the vibration frequency of beams 50, 52 ineach transducer 22, 24. To minimize changes in the vibration frequencyof beams 50, 52 that are not related to the applied force, it isadvantageous to have a relatively high velocity from the vibrationalmotion of beams 50, 52. The vibrational velocity is generallyproportional to the resonance amplification factor (Q) and, therefore,it is generally considered beneficial to maximize the Q of vibratorytransducers 22, 24. Typically, Q is maximized by partially evacuatingaccelerometer 2 to reduce damping of beams 50, 52. This is because theair between the moving beams 50, 52 and the electrodes 62, 64 damps themovement of beams 50, 52 toward electrodes 62, 64. On the other hand, itis also desirable to provide gas damping of proof mass 18 to minimizethe vibration of proof mass 18 that is not related to an applied force.For example, if a force were applied to mass 18 in a vacuum or nearvacuum, the mass 18 would continue to swing back and forth about innerflexures 14, 16 until it eventually slowed to a halt. Undesirableresonance can also be caused by vibrations in the surroundingenvironment (other than the applied force) that cause the proof mass tooscillate. Gas damping of proof mass 18 minimizes these undesirableoscillations.

Applicant has found that intermeshed beam and electrode fingers 80, 82decease the damping of beams 50, 52 at pressures above vacuum on theorder of 5 to 10 times. In fact, transducers 22, 24 of the presentinvention operate effectively in air having substantially higherpressure levels than vacuum (on the order 1/10 to 1 atmosphere).Applicant believes that this occurs because a portion of the air betweenbeams 50, 52 and electrodes 62, 64 is located in the axial gaps betweenbeam and electrode fingers 80, 82. Since fingers 80, 82 are not movingtoward and away from each other, this portion of the air contributessubstantially less to the damping of the beams 50, 52. Accordingly,transducers 22, 24 can be operated at atmospheric pressure, which allowsproof mass 18 to be gas damped to minimize undesirable vibrations in theproof mass 18.

Referring to FIGS. 7A-7C, the method of manufacturing accelerometer 2according to the present invention will now be described. An insulatinglayer of silicon oxide is first applied to substrate 32, active layer 31or both. Preferably, an oxide layer 120 is epitaxially grown onsubstantially flat surfaces of silicon wafers 122, 124, as shown in FIG.7A. The silicon wafers 122, 124 are then placed together (see FIG. 7B),preferably by molecular bonding at elevated temperatures (e.g., on theorder of about 300° C. to 500° C.) In a preferred configuration,portions of the silicon wafers 122, 124 will be removed after they havebeen bonded together to provide a substrate 32 having a thickness ofabout 300 to 700 micrometers, preferably about 400 to 600 micrometers,and a relatively thin active layer 31 of about 5 to 40 micrometers,preferably about 10 to 30 micrometers (see FIG. 7C).

Proof mass 18 and instrument frames 6, 8 are then etched into substrate32 so that proof mass 18 is suspended from inner frame 8 by flexures 14,16, and transducers 22, 24 are etched into active layer 31 (see FIGS. 1and 2). Insulating layer 34 inhibits undesirable etching of transducers22, 24 while the substrate 32 is being etched and vice versa. First andsecond parallel beams 50, 52 are etched, preferably with reactive ionetching, into the active layer 31. Electrodes 62, 64 are etched fromactive layer 31 and doped with a suitable conductive material to createthe necessary charge carriers and to facilitate completion of theelectrical circuit. After the accelerometers components are formed intothe silicon wafers 122, 124, the beams 50, 52 are mechanically coupledto proof mass 18 and inner frame 8, and the electrodes 62, 64 arecapacitively coupled to oscillator circuit 30.

Although the foregoing invention has been described in detail forpurposes of clarity, it will be obvious that certain modifications maybe practiced within the scope of the appended claims. For example,although the present invention is particularly useful forelectrostatically driven resonators, it may also be used with otherdrive means, such as piezoelectric drives, electromagnetic drives,thermal drives or the like.

What is claimed is:
 1. An accelerometer made from a processcomprising:applying an epitaxial insulating layer between asemiconducting substrate and a semiconducting active layer; forming aframe and a proof mass in the substrate such that the proof mass issuspended from the frame by one or more flexures; and forming one ormore vibratory force transducers in the active layer such that thetransducers are coupled to the proof mass and the frame and are capableof detecting a force applied to the proof mass, said forming one or morevibratory force transducers further comprising:etching first and secondparallel beams in said active layer, each beam having first and secondend portions and a resonating portion therebetween; mechanicallycoupling the first end portions of the beams to the proof mass and thesecond end portions to the frame; and etching an electrode in saidactive layer, the electrode being positioned adjacent to and laterallyspaced from the first beam; etching one or more fingers extendinglaterally outward from the first beam; and etching one or more fingersprojecting laterally inward from said electrode toward the first beamand intermeshed with the one or more fingers of the first beam; whereinsaid insulating layer provides both electrical and mechanical insulationbetween said substrate and said active layer.
 2. The accelerometer ofclaim 1, wherein applying an epitaxial insulating layer between asemiconducting substrate and a semiconducting active layercomprises:providing first and second silicon wafers each having asubstantially planar surface; and applying a silicon oxide layer on theplanar surfaces of the first and second silicon wafers.
 3. Theaccelerometer of claim 2, wherein applying an epitaxial insulating layerbetween a semiconducting substrate and a semiconducting active layerfurther comprises bonding the silicon oxide layers on the planarsurfaces of the first and second silicon wafers together such that thesilicon wafers are coupled to and insulated from each other.
 4. Theaccelerometer of claim 2, wherein said applying a silicon oxide layer onthe planar surfaces of the first and second silicon wafers comprisesepitaxially growing silicon oxide onto the planar surfaces of thesilicon wafers.
 5. The accelerometer of claim 3, wherein said bondingcomprises placing the silicon oxide layers together and applying heat.6. The accelerometer of claim 5, wherein said silicon oxide layer isabout 0.1 to 10 micrometers thick.
 7. The accelerometer of claim 3,wherein applying an epitaxial insulating layer between a semiconductingsubstrate and a semiconducting active layer further comprises removing aportion of the silicon wafers such that the first silicon wafer has athickness of about 300 to 700 micrometers and the second silicon waferhas a thickness of about 5 to 40 micrometers.
 8. The accelerometer ofclaim 7, wherein forming a frame and a proof mass further comprisesetching the first silicon wafer to form the proof mass and the frame,and forming one or more vibratory force transducers comprises etchingthe second silicon wafer to form a pair of vibratory force transducers.9. The accelerometer of claim 8, wherein the active layer and thesubstrate each have surfaces opposite the planar surfaces, theaccelerometer further comprising etching one or more flexure hinges torotatably couple the proof mass to the frame, the flexure hinges beingsubstantially centered between the opposite surfaces of the active layerand the substrate.
 10. The accelerometer of claim 1, further comprisingelectrically coupling an oscillating circuit to the vibratory forcetransducers.
 11. A method for manufacturing a force transducercomprising the steps of:suspending a proof mass from a stationary frameon a semiconductor wafer; mechanically coupling at least one vibratoryforce transducer to the proof mass and the frame, said couplingcomprises fixing first end portions of first and second parallel beamsto the suspended proof mass and fixing second end portions of first andsecond parallel beams to the stationary frame, positioning an electrodeadjacent to and laterally spaced from the first beam, laterallyextending one or more fingers outward from the first parallel beams, andlaterally extending one or more fingers from the electrode adjacent tothe first beam inwardly toward the first parallel beam and intermeshedwith the one or more fingers of the first beam; and electricallyinsulating at least a portion of the vibratory force transducer from thesemiconductor wafer.
 12. The method of claim 11, further comprisingapplying a silicon oxide layer onto planar surfaces of first and secondsilicon wafers and bonding the silicon oxide layers together such thatthe silicon wafers are coupled to and insulated from each other.
 13. Themethod of claim 12, further comprising etching the first silicon waferto form the proof mass suspended from the frame by one or more flexurehinges and etching the second silicon wafer to form a pair of vibratoryforce transducers.
 14. The method of claim 13, further comprisingetching first and second parallel beams each having first and second endportions and a resonating portion therebetween, and first and secondelectrodes positioned adjacent to and laterally spaced from the firstand second beams.
 15. The method of claim 14, further comprising axiallyspacing a plurality of laterally projecting fingers on the beams from aplurality of laterally projecting fingers on the electrodes such thatthe beam fingers and the electrode fingers are spaced at a constantdistance during lateral vibration of the beams.
 16. A method fordetecting an applied force comprising the steps of:suspending a proofmass from a stationary frame on a semiconductor wafer; mechanicallycoupling at least one vibratory force transducer to the proof mass andthe frame, said coupling comprises fixing first end portions of firstand second parallel beams to the suspended proof mass and fixing secondend portions of first and second parallel beams to the stationary frame,positioning an electrode adjacent to and laterally spaced from the firstbeam, laterally extending one or more fingers outward from the firstparallel beams, and laterally extending one or more fingers from theelectrode adjacent to the first beam inwardly toward the first parallelbeam and intermeshed with the one or more fingers of the first beam; andelectrically insulating at least a portion of the vibratory forcetransducer from the semiconductor wafer transversely vibrating aresonating portion of the first parallel beam at a resonant frequencywith the electrode; applying an axial force to the beams in response toa force applied to the proof mass to vary a vibration frequency of thebeam; and detecting the vibration frequency to determine the forceapplied to the proof mass.